▎ 摘　　要

We fabricated artificially stacked double-layer graphene by sequentially transferring graphene grown by chemical vapor deposition. The double-layer graphene was characterized by Raman spectroscopy and transport measurements. A weak localization effect was observed for different charge carrier densities and temperatures. The obtained intervalley scattering rate was unusually high compared to normal Bernal-stacked bilayer or single-layer graphene. The sharp point defects, local deformation, or bending of graphene plane required for intervalley scattering from one Dirac cone to another seemed to be enhanced by the artificially stacked graphene layers.