• 文献标题:   On the mechanism of room temperature superconductivity in substitutionally doped graphene
  • 文献类型:   Article
  • 作  者:   SINHA KP, JINDAL A
  • 作者关键词:   graphene, boron doping, phonon bondpolarization mechanism, hightemperature superconductivity
  • 出版物名称:   SOLID STATE COMMUNICATIONS
  • ISSN:   0038-1098 EI 1879-2766
  • 通讯作者地址:   Indian Inst Sci
  • 被引频次:   2
  • DOI:   10.1016/j.ssc.2013.11.009
  • 出版年:   2014

▎ 摘  要

A combined mechanism involving phononic and electronic processes is suggested for superconductivity in substitutionally doped graphene. The electronic mechanism is similar to the one used for doped fullerene system, MxC60 (M K, Rb, etc.) and triggered by bond polarization due to doped impurities such as B or Al. It is found that on increasing the doping, the superconducting critical temperature can be raised to room temperature. The details of the combined model are given along with the predicted values of T-c. (C) 2013 Elsevier Ltd. All rights reserved,