▎ 摘　　要

In this study porous silicon/graphene-based nanostructures were prepared by deposition of the graphene oxide and the reduced graphene oxide on the porous silicon layer. The charge transport in obtained structures was analyzed on the basis of temperature dependencies of the conductivity in the 12-300 K range within the model of disordered semiconductors. Hopping conductivity and activation mechanism of charge transport in different temperature ranges were established and the activation energy of the conductivity was determined. The deposition of the graphene and graphene oxide nanosheets on the porous silicon surface changes the limits of these ranges toward lower temperatures. The impedance spectra of PS/graphene-based structures were measured in the 25 Hz - 1 MHz frequency range in the wide temperature range. A decrease in electrical capacitance with increasing the frequency and an increase in impedance at lowering the temperature were revealed.