▎ 摘　　要

In this paper we present a novel method of regulation to obtain graphene layers with homogeneous thickness by means of helium plasma implantation. The obtained graphene layers show neither large deep pits nor loss of lateral dimension. The etching rate can be precisely controlled (one to six atomic layers min(-1) or higher) and it remains consistent regardless of the thickness of the multilayer graphene. This approach is compatible with traditional complementary metal-oxide-semiconductor fabrication technologies and has great potential to modulate the performance of graphene for device applications.