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  • 文献标题:   BN/Graphene/BN Transistors for RF Applications
  • 文献类型:   Article
  • 作　　者:   WANG H, TAYCHATANAPAT T, HSU A, WATANABE K, TANIGUCHI T, JARILLOHERRERO P, PALACIOS T
  • 作者关键词:   graphene fieldeffect transistors gfets, hexagonal boron nitride hbn, radio frequency rf
  • 出版物名称:   IEEE ELECTRON DEVICE LETTERS
  • ISSN:   0741-3106
  • 通讯作者地址:   MIT
  • 被引频次:   130
  • DOI:   10.1109/LED.2011.2160611
  • 出版年:   2011

▎ 摘　　要

In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to enable the next generation of high-frequency graphene RF electronics.