▎ 摘　　要

Electrical rectification, which is a key phenomenon for active current flow control, is expected to occur in asymmetric nanostructures, in particular in trapezoidal graphene nanoribbons (GNRs). We have investigated the influence of geometry of such GNRs on transport of charge carriers in order to find the optimum configuration for a high rectification effect. We found that the rectification factor depends on the trapezoidal shape (rectangular versus isosceles), on the asymmetry of the structure (the base ratio), as well as on the shape of pores introduced in the GNRs. Through simulations of the wavefunction modulus for different GNR geometries we have established that the rectification factor depends on the dissimilarity of localization probabilities of charge carriers at the drain regions for the opposite charge flow directions, dissimilarity determined by interference effects between different propagating modes in the GNRs.