▎ 摘　　要

In this paper, the noise equivalent power (NEP) of optical sensors based on graphenesuperconductor junctions in the voltage bias operation mode has been calculated. The effects of device parameters such as temperature, magnetic field and device resistance on the NEP of these detectors have been thoroughly investigated. By solving the related equations, graphene specific heat, thermal conductivity, electron-phonon interaction and responsivity of the detector have been obtained. Using the calculated parameters, the NEP of the device was obtained. The results show that at constant magnetic field the NEP will increase linearly by increasing device temperature. On the other hand, at constant temperature the behavior of NEP versus magnetic field is first increasing and then decreasing. Our calculations show that the optimal resistance of the device has a direct relation with respect to the device temperature, while in the investigated operating range the optimal resistance of device is almost independent of the magnetic field.