• 文献标题:   Theory of Transport in Graphene with Long-Range Scatterers
  • 文献类型:   Article
  • 作  者:   NORO M, KOSHINO M, ANDO T
  • 作者关键词:   charged scatterer, impurity scattering, twodimensional graphite, level broadening, dirac point
  • 出版物名称:   JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
  • ISSN:   0031-9015
  • 通讯作者地址:   Tokyo Inst Technol
  • 被引频次:   25
  • DOI:   10.1143/JPSJ.79.094713
  • 出版年:   2010

▎ 摘  要

The density of states and conductivity are calculated for scatterers with nonzero range in monolayer graphene within a self-consistent Born approximation. For scatterers with a Gaussian potential, the minimum conductivity at the Dirac point remains universal in the clean limit, but increases with disorder and becomes nonuniversal for long-range scatterers. For charged impurities, we use the Thomas-Fermi approximation for the screening effect. The conductivity increases in proportion to the electron concentration in agreement with experiments and the minimum conductivity becomes about twice as large as the universal value.