• 文献标题:   A bilayer graphene nanoribbon field-effect transistor with a dual-material gate
  • 文献类型:   Article
  • 作  者:   OWLIA H, KESHAVARZI P
  • 作者关键词:   bilayer graphene nanoribbon fieldeffect transistor blgnrfet, dualmaterial gate dmg, shortchannel effects sces, nonequilibrium green s function negf
  • 出版物名称:   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • ISSN:   1369-8001 EI 1873-4081
  • 通讯作者地址:   Semnan Univ
  • 被引频次:   7
  • DOI:   10.1016/j.mssp.2015.06.014
  • 出版年:   2015

▎ 摘  要

This paper introduces dual-material gate (DMG) configuration on a bilayer graphene nanoribbon field-effect transistor (BLGNRFET). Its device characteristics based on nonequilibrium Green's function (NEGF) are explored and compared with a conventional single-material gate BLGNRFET. Results reveal that an on-off ratio of up to 10 is achievable as a consequence of both higher saturation and lower leakage currents. The advantages of our proposed DMG structure mainly lie in higher carrier transport efficiency by means of enhancing initial acceleration of incoming carriers in the channel region and the suppression of short channel effects. Drain-induced barrier lowering, subthreshold swing and hot electron effect as the key short channel parameters have been improved in the DMG-based BLGNRFET. (C) 2015 Elsevier Ltd. All rights reserved.