• 文献标题:   Interfacial electronic structures between fullerene and multilayer graphene for n-type organic semiconducting devices
  • 文献类型:   Article
  • 作  者:   YI Y, CHOI WM, SON B, KIM JW, KANG SJ
  • 作者关键词:  
  • 出版物名称:   CARBON
  • ISSN:   0008-6223 EI 1873-3891
  • 通讯作者地址:   Kyung Hee Univ
  • 被引频次:   13
  • DOI:   10.1016/j.carbon.2011.07.021
  • 出版年:   2011

▎ 摘  要

The interfacial electronic structure of fullerene (C-60) deposited on a multilayer graphene (MLG) film was measured using in situ ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy. The energy level alignment at the interface of C-60/MLG was estimated by the shifts in the highest occupied molecular orbital (HOMO) and the vacuum level during step-by-step deposition of C-60 on the MLG. The shift of the HOMO level indicates that there is a small band bending at the interface of C-60/MLG. The vacuum level was shifted 0.06 eV toward the low binding energy with additional C-60 on the MLG. The measurements reveal that the height of the electron injection barrier is 0.59 eV, while the hole injection barrier height is 2.01 eV. We present a complete interfacial energy level diagram for C-60/MLG. (C) 2011 Elsevier Ltd. All rights reserved.