• 文献标题:   Limits on Charge Carrier Mobility in Suspended Graphene due to Flexural Phonons
  • 文献类型:   Article
  • 作  者:   CASTRO EV, OCHOA H, KATSNELSON MI, GORBACHEV RV, ELIAS DC, NOVOSELOV KS, GEIM AK, GUINEA F
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007
  • 通讯作者地址:   CSIC
  • 被引频次:   229
  • DOI:   10.1103/PhysRevLett.105.266601
  • 出版年:   2010

▎ 摘  要

The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature T greater than or similar to 10 K, and the resistivity increases quadratically with T. Flexural phonons limit the intrinsic mobility down to a few m(2)/Vs at room T. Their effect can be eliminated by applying strain or placing graphene on a substrate.