▎ 摘　　要

Graphene, a single atomic layer of graphite, has been a material of recent intensive studies due to its novel electronic and structural properties and its potential applications in the emerging area of carbon-based electronic devices. Metal on graphene growth is one of the current research interests, aiming at improving and manipulating the electronic and magnetic properties of graphene through metal atom adsorption or doping to meet various requirements in device applications. In this paper, we will give an overview of recent experimental and computational investigation of interaction, growth morphology, and thermal stability of various metals on graphene grown on 6H-SiC(0001) substrate.