• 文献标题:   Fano Factor in Strained Graphene Nanoribbon Nanodevices
  • 文献类型:   Article
  • 作  者:   SOLIMAN W, ASHAM MD, PHILLIPS AH
  • 作者关键词:  
  • 出版物名称:   CHINESE PHYSICS LETTERS
  • ISSN:   0256-307X EI 1741-3540
  • 通讯作者地址:   Benha Univ
  • 被引频次:   0
  • DOI:   10.1088/0256-307X/34/11/118503
  • 出版年:   2017

▎ 摘  要

We investigate the Fano factor in a strained armchair and zigzag graphene nanoribbon nanodevice under the effect of ac field in a wide range of frequencies at different temperatures (10 K-70 K). This nanodevice is modeled as follows: a graphene nanoribbon is connected to two metallic leads. These two metallic leads operate as a source and a drain. The conducting substance is the gate electrode in this three-terminal nanodevice. Another metallic gate is used to govern the electrostatics and the switching of the graphene nanoribbon channel. The substances at the graphene nanoribbon/metal contact are controlled by the back gate. The photon-assisted tunneling probability is deduced by solving the Dirac eigenvalue differential equation in which the Fano factor is expressed in terms of this tunneling probability. The results show that for the investigated nanodevice, the Fano factor decreases as the frequency of the induced ac field increases, while it increases as the temperature increases. In general, the Fano factors for both strained armchair and zigzag graphene nanoribbons are different. This is due to the effect of the uniaxial strain. It is shown that the band structure parameters of graphene nanoribbons at the energy gap, the C-C bond length, the hopping integral, the Fermi energy and the width are modulated by uniaxial strain. This research gives us a promise of the present nanodevice being used for digital nanoelectronics and sensors.