▎ 摘　　要

Nanoscale dielectric capacitors have been widely studied due to their ability to store a high amount of energy. In this research, we have modeled one which is composed of a few dopants graphene layers including Li, Be, B (of second row in Mendeleev table) separated by an insulating medium of a few horizontal boron nitride (h-BN) layers. It has been indicated that the boron atoms are the suitable dopants for hetero-structures of the X-G/(h-BN)(m)/X-G capacitor compared to those from groups IA or IIA. It has been specifically studied the quantum and coulomb blocked effects of different h-BN/graphene including hetero-structures, stacks for multi dielectric properties of different (h-BN)(n)/graphene. We have shown that the quantum effect has appeared in small thickness of capacitor due to number of layers and this effect cannot occur in the layers more than 4 of h-BN, while the m = 3 is suitable layer for the capacitor simulation. (C) 2015 The Japan Society of Applied Physics