• 文献标题:   Semiconductor artificial graphene: Effects in weak magnetic fields
  • 文献类型:   Article
  • 作  者:   TKACHENKO OA, TKACHENKO VA
  • 作者关键词:  
  • 出版物名称:   JETP LETTERS
  • ISSN:   0021-3640 EI 1090-6487
  • 通讯作者地址:   Russian Acad Sci
  • 被引频次:   3
  • DOI:   10.1134/S0021364014040146
  • 出版年:   2014

▎ 摘  要

Two-dimensional quantum transport through the stripe of the hexagonal lattice of antidots built in the multimode channel in the GaAs/AlGaAs structure has been studied numerically. It has been found that the low perpendicular magnetic fields (similar to 3 mT) suppress the bulk currents and cause the appearance of the edge Landau states and high positive magnetic resistance on both sides of the Dirac point. Tamm edge states are present in some energy intervals; as a result, the 4e (2)/h-amplitude oscillations caused by the quantization of these states on the lattice length are added to the steps of the conductance quantization G(n) = (2 vertical bar n vertical bar + 1)2e(2)/h.