• 文献标题:   Thickness-Independent Energy Dissipation in Graphene Electronics
  • 文献类型:   Article
  • 作  者:   WEI YH, ZHANG RY, ZHANG Y, ZHENG XM, CAI WW, GE Q, NOVOSELOV KS, XU ZJ, JIANG T, DENG CY, ZHANG XA, QIN SQ
  • 作者关键词:   energy dissipation, raman spectrum, graphene, thermal transport, infrared emission
  • 出版物名称:   ACS APPLIED MATERIALS INTERFACES
  • ISSN:   1944-8244 EI 1944-8252
  • 通讯作者地址:   Natl Univ Def Technol
  • 被引频次:   1
  • DOI:   10.1021/acsami.0c00113
  • 出版年:   2020

▎ 摘  要

The energy dissipation issue has become one of the greatest challenges of the modern electronic industry. Incorporating graphene into the electronic devices has been widely accepted as a promising approach to solve this issue, due to its superior carrier mobility and thermal conductivity. Here, using Raman spectroscopy and infrared thermal microscopy, we identify the energy dissipation behavior of graphene device with different thicknesses. Surprisingly, the monolayer graphene device is demonstrated to have a comparable energy dissipation efficiency per unit volume with that of a few-layer graphene device. This has overturned the traditional understanding that the energy dissipation efficiency will reduce with the decrease of functional materials dimensions. Additionally, the energy dissipation speed of the monolayer graphene device is very fast, promising for devices with high operating frequency. Our finding provides a new insight into the energy dissipation issue of two-dimensional materials devices, which will have a global effect on the development of the electronic industry.