▎ 摘　　要

Graphene quantum dots (GQDs) doped InGaO (IGO) thin film transistors (TFTs) have been fabricated based on solution-driven ZrOx as gate dielectrics. Compare to pure IGO TFTs, superior electrical performance of the GQDs-IGO TFTs can be achieved by adjusting the doping concentration. It has been demonstrated that GQDs-modified IGO TFTs devices with GQDs doping content of 0.3 mg center dot ml(-1) have the optimized performances, including field-effect mobility (mu(FE)) of 22.02 cm(2)center dot V-1 center dot s(-1), on/off current ratio (I-on/I-off) of 7.06 x 10(7), subthreshold swing (SS) of 0.09 V center dot dec(-1), hysteresis of 0.04 V and interfacial trap states (D-it) of 1.03 x 10(12) cm(-2). In addition, bias stress and illumination stress tests have been performed and excellent stability has been achieved for optimized GQDs-IGO-TFTs. The GQDs-IGO TFTs device showed smaller threshold voltage shift of 0.12 and 0.04 V under positive bias stress (PBS) test and negative bias stress (NBS) test for 3600 s, respectively. And it showed smaller threshold voltage shift of 0.27 and 0.34 V for red light under the PBS and NBS test for 3600 s, respectively. Meanwhile, it showed smaller threshold voltage shift of 0.20 and 0.22 V for green light under PBS and NBS test for 3600 s, respectively. It also showed smaller threshold voltage shift of 0.17 and 0.12 V for blue under the positive bias illumination stress (PBIS) test and negative bias illumination stress (NBIS) test for 3600 s, respectively. Lowfrequency noise (LFN) characteristics of GQDs-IGO/ZrOx TFTs indicated that the noise source came from the fluctuations in mobility. Finally, a low voltage resistor-loaded unipolar inverter has been built based on GQDs-IGO/ZrOx TFT, demonstrating good dynamic response behavior and a maximum gain of 7.4. These experimental results have suggested that solution-processed GQDs-IGO/ZrOx TFT may envision potential applications in low-cost and large-area electronics.