• 文献标题:   Temperature-dependent resistivity in bilayer graphene due to flexural phonons
  • 文献类型:   Article
  • 作  者:   OCHOA H, CASTRO EV, KATSNELSON MI, GUINEA F
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   CSIC
  • 被引频次:   48
  • DOI:   10.1103/PhysRevB.83.235416
  • 出版年:   2011

▎ 摘  要

We have studied electron scattering by out-of-plane (flexural) phonons in doped suspended bilayer graphene. We have found the bilayer membrane to follow the qualitative behavior of the monolayer cousin. In the bilayer, a different electronic structure combine with a different electron-phonon coupling to give the same parametric dependence in resistivity and, in particular, the same temperature (T) behavior. In parallel with the single layer, flexural phonons dominate the phonon contribution to resistivity in the absence of strain, where a density-independent mobility is obtained. This contribution is strongly suppressed by tension, and in-plane phonons become the dominant contribution in strained samples. Among the quantitative differences, an important one has been identified: room-temperature mobility in bilayer graphene is substantially higher than in monolayer graphene. The origin of quantitative differences has been unveiled.