▎ 摘　　要

We report a unique process for rapid synthesis of few-layer graphene films on Cu foil by microwave plasma chemical vapor deposition (MPCVD). We show that the plasma/metal interaction can be advantageous for a rapid synthesis of such thin films. The process can produce films of controllable quality from amorphous to highly crystalline by adjusting plasma conditions during growth processes of similar to 100 s duration and with no supplemental substrate heating. Films have been characterized using Raman spectroscopy, scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. The results help to identify the stages involved in the MPCVD deposition of thin carbon films on Cu foil, and the findings open new pathways for a rapid growth of few-layer graphene films. (C) 2011 Elsevier Ltd. All rights reserved.