▎ 摘　　要

Graphene grown by chemical vapor deposition has attracted much attention in optoelectronic application due to its great potential as a large-area 2D electrode material. However, the clean transfer and effective microscale patterning of graphene still remain great challenges for its use as the electrode in the optoelectronic devices. In this paper, a simple and reliable transfer-pattern strategy is developed for the microscale-patterned graphene electrode by using a photoresist as both supporting layer for the graphene transfer and photolithographic mask layer. The microscale-patterned graphene electrodes transferred onto the desired substrates exhibit low surface roughness of 0.675 nm and mean sheet resistance of 444 Omega (sic)(-1). 25 mu m line width patterned organic light-emitting devices (OLEDs) arrays with high precision and uniform lighting area have proved the great potential of the transfer-pattern strategy for high-resolution OLEDs. Flexible and efficient OLEDs based on patterned graphene anodes can be realized by this strategy. Moreover, a scale of approximate to 2 in. patterned graphene well demonstrates the feasibility of the transfer-pattern strategy for large-area fabrication of the microscale-patterned graphene.