• 文献标题:   Coulomb Oscillations in a Gate-Controlled Few-Layer Graphene Quantum Dot
  • 文献类型:   Article
  • 作  者:   SONG YP, XIONG HN, JIANG WT, ZHANG HY, XUE X, MA C, MA YL, SUN LY, WANG HY, DUAN LM
  • 作者关键词:   fewlayer graphene, quantum dot, landau level, coulomb oscillation, tunable barrier
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Tsinghua Univ
  • 被引频次:   5
  • DOI:   10.1021/acs.nanolett.6b02522
  • 出版年:   2016

▎ 摘  要

Graphene quantum dots could be an ideal host for spin qubits and thus have been extensively investigated based on graphene nanoribbons and etched nanostructures; however, edge and substrate induced disorders severely limit device functionality. Here, we report the confinement of quantum dots in few-layer graphene with tunable barriers, defined by local strain and electrostatic gating. Transport measurements unambiguously reveal that confinement barriers are formed by inducing a band gap via the electrostatic gating together with local strain induced constriction. Numerical simulations according to the local top-gate geometry confirm the band gap opening by a perpendicular electric field. We investigate the magnetic field dependence of the energy-level spectra in these graphene quantum dots. Experimental results reveal a complex evolution of Coulomb oscillations with the magnetic field, featuring kinks at level crossings. The simulation of energy spectrum shows that the kink features and the magnetic field dependence are consistent with experimental observations, implying the hybridized nature of energy-level spectrum of these graphene quantum dots.