• 文献标题:   Dependence of the Nitrogen Dioxide (NO2) Sensitivity of SnOx-Sn/Graphene Gas Sensors on Vacuum Annealing and Ultraviolet (UV) Ozone Exposure
  • 文献类型:   Article
  • 作  者:   MU HC, WANG KK, XIE HF
  • 作者关键词:   graphene, snoxsn compound film, no2 sensitivity
  • 出版物名称:   JOURNAL OF NANOSCIENCE NANOTECHNOLOGY
  • ISSN:   1533-4880 EI 1533-4899
  • 通讯作者地址:   East China Univ Sci Technol
  • 被引频次:   2
  • DOI:   10.1166/jnn.2017.12618
  • 出版年:   2017

▎ 摘  要

Tin oxides and tin (SnOx-Sn) compound films were thermally evaporated onto chemical vapor deposition (CVD)-grown graphene films to obtain improved nitrogen dioxide (NO2) gas sensitivity. The effects of the vacuum annealing and ultraviolet (UV) ozone (O-3) exposure of the bare graphene films prior to the thermal evaporation on the SnOx-Sn films' sensitivities, bonding states, and surface morphologies were investigated. With increasing annealing time, the coverage of the SnOx-Sn nanoparticles on the graphene increased and the p to n sensitivity transition occurred when n-type SnOx-Sn nanoparticles became dominant instead of the p-type graphene films for sensors without O-3 exposure. Meanwhile, the opposite p-type sensitivity response was dominant with increasing annealing time for the O-3-treated sensors. The chemisorbed Sn on the graphene generated by O-3 exposure was oxidized by highly reactive NO2, resulting in a p-type doping effect, which would lead to n-to p-type sensitivity transition when the hole concentration exceeded the initial electron concentration of the n-type SnOx-Sn compound films. Vacuum annealing and O-3 exposure also exhibited a tremendous influence on the SnOx-Sn films' surface morphologies, which could be responsible for the subsequent sensitivity dependence.