• 文献标题:   Controllable growth of single-layer graphene on a Pd(111) substrate
  • 文献类型:   Article
  • 作  者:   GAO JH, ISHIDA N, SCOTT I, FUJITA D
  • 作者关键词:  
  • 出版物名称:   CARBON
  • ISSN:   0008-6223 EI 1873-3891
  • 通讯作者地址:   Natl Inst Mat Sci
  • 被引频次:   28
  • DOI:   10.1016/j.carbon.2011.12.012
  • 出版年:   2012

▎ 摘  要

Using a surface segregation technique, single-layer graphene can be grown on a carbon-doped Pd(111) substrate. The growth was monitored and visualized using Auger electron spectroscopy, X-ray photoelectron spectroscopy. Raman microscopy, atomic force microscopy and scanning tunneling microscopy. Appropriate adjustment of annealing parameters enables controllable growth of single-layer graphene islands and homogeneous, wafer-scale, single-layer graphene. The chemical state of the C 1s peak from X-ray photoelectron spectroscopy indicates there is almost no charge transfer between graphene and the Pd(111) substrate, suggesting weak graphene-substrate interaction. These findings show surface segregation to be an effective method for synthesizing large-scale graphene for fundamental research as well as potential applications. (C) 2011 Elsevier Ltd. All rights reserved.