• 文献标题:   Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors
  • 文献类型:   Article
  • 作  者:   LI SB, WANG ZF, JIANG HM, ZHANG LM, REN JZ, ZHENG MT, DONG LC, SUN LY
  • 作者关键词:  
  • 出版物名称:   CHEMICAL COMMUNICATIONS
  • ISSN:   1359-7345 EI 1364-548X
  • 通讯作者地址:   Chongqing Univ
  • 被引频次:   37
  • DOI:   10.1039/c6cc04052g
  • 出版年:   2016

▎ 摘  要

In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance.