▎ 摘　　要

The temperature dependent electrical properties of epitaxial graphene grown on Si-face and C-face SiC substrates were investigated by Hall measurements, respectively. Quasi-free-standing epitaxial graphene by H-2 intercalation was adopted as the control. Due to a similar to 200meV band gap, the electrical conductivities of graphene on Si-face SiC showed a great increase at temperatures above 350K compared to the other two. The opened band gap was found attributed to the existent buffer layer. The fitting results of Hall mobility indicates that the buffer layer also limits the carrier transportation of graphene grown on Si-face SiC, as it introduced low energy optical phonon scattering to its epilayer. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773568]