• 文献标题:   N-type field-effect transistor based on a fluorinated-graphene
  • 文献类型:   Article
  • 作  者:   MORI T, KIKUZAWA Y, TAKEUCHI H
  • 作者关键词:   ofet, hexabenzocoronene, graphene
  • 出版物名称:   ORGANIC ELECTRONICS
  • ISSN:   1566-1199
  • 通讯作者地址:   Toyota Cent Res Dev Labs Inc
  • 被引频次:   39
  • DOI:   10.1016/j.orgel.2008.01.002
  • 出版年:   2008

▎ 摘  要

A fluorinated-graphene, 2,5,8,11,14,17-hexafluoro-hexa-peri-hexabenzocoronene (6F-HBC), has been synthesized. 6F-HBC was deposited by vacuum sublimation as an active layer in an organic field-effect transistor (OFET). The OFET with 6F-HBC performed as an n-type semiconductor, while that with hexa-peri-hexabenzocoronene (HBC) performed as a p-type semiconductor. The electron field-effect mobility and on/off ratio for 6F-HBC were 1.6 x 10(-2) cm(2)/Vs and 10(4), respectively. Hexafluoro-substituting reduces both the highest occupied molecular orbital and lowest unoccupied molecular orbital levels by 0.5 eV, which is suitable for electron injection from the electrode. 6F-HBC has a face-to-face structure which is a preferable crystal structure for carrier transport. (C) 2008 Elsevier B.V. All rights reserved.