▎ 摘　　要

Electric-field-induced doping treatment is applied to a monolayer graphene (MLG) film to improve its usability as a transparent conductive electrode (TCE). Ni is used as a doping source, which produces conductive bridges consisting of ionized Ni by electromigration from an Ni pad to the as-transferred chemical vapor deposition grown MLG films through AlN buffer layers, by applying voltages of 3.62 +/- 0.34 V. As a result, the sheet resistance of the MLG reduces from 712 +/- 75.2 X sq(-1) to 216 +/- 46.1 X sq(-1) and the surface current increases from 6.63 +/- 2.07 nA to 8.91 +/- 1.62 nA. Additionally, the work function of the MLG increases from 4.36 eV to 5.0 eV due to p-type doping effects. The intercalation of Ni atoms into the MLG is directly confirmed by X-ray photoelectron spectroscopy and Raman spectrum analyses. Finally, the Ni-doped MLG is utilized as the TCE layer for 365 nm light-emitting diodes, exhibiting much better optical properties compared to a standard LED with a 100 nm-thick indium tin oxide electrode.