• 文献标题:   Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics
  • 文献类型:   Article
  • 作  者:   LEE YG, KANG CG, JUNG UJ, KIM JJ, HWANG HJ, CHUNG HJ, SEO S, CHOI R, LEE BH
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Gwangju Inst Sci Technol
  • 被引频次:   98
  • DOI:   10.1063/1.3588033
  • 出版年:   2011

▎ 摘  要

Device instabilities of graphene metal-oxide-semiconductor field effect transistors such as hysteresis and Dirac point shifts have been attributed to charge trapping in the underlying substrate, especially in SiO2. In this letter, trapping time constants around 87 mu s and 1.76 ms were identified using a short pulse current-voltage method. The values of two trapping time constants with reversible trapping behavior indicate that the hysteretic behaviors of graphene field effect transistors are due to neither charge trapping in the bulk SiO2 or tunneling into other interfacial materials. Also, it is concluded that the dc measurement method significantly underestimated the performance of graphene devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3588033]