▎ 摘　　要

The quantum Hall (QH) effect, the quantum spin Hall (QSH) effect, and the quantum valley Hall (QVH) effect are three peculiar topological insulating phases in graphene. They are characterized by three different types of edge states. These three effects are caused by the external magnetic field, the intrinsic spin-orbit coupling (SOC) and the strain-induced pseudomagnetic field, respectively. Here we theoretically study phase diagrams when these effects coexist and analyze how the edge states evolve between the three. We find the real magnetic field and the pseudomagnetic field will compete above the SOC energy gap while the QSH effect is almost unaffected within the SOC energy gap. The edge-state transitions from the QH effect or the QVH effect to the QSH effect directly relies on the arrangement of the zeroth Landau levels. Using edge-state transitions, we raise a device similar to a spin field effect transistor (spin-FET) and also design a spintronics multiple-way switch.