▎ 摘　　要

We present a numerical study on the impact of electron-phonon scattering on the performance of a strained-graphene field-effect transistor, where the Dirac point of the channel region is shifted along the transverse momentum direction by a strain-induced vector potential and a high on-current/off-current ( on / off) ratio as well as a subthreshold slope (SS) steeper than 60mV/dec have been predicted in the absence of the electron-phonon interaction previously. By using the Dirac-type effective Hamiltonian description for strained graphene and the non-equilibrium Green's function method to systematically account for the electron-phonon scattering, along with Poisson's equation, we demonstrate that the abovementioned on / off ratio and SS value can be maintained even in the presence of electron-phonon scattering, although the on / off ratio and the D range over which the steep SS persists are reduced.