▎ 摘　　要

Single layer graphene grown by chemical vapor deposition (CVD) method on Cu foil and then transferred onto a borosilicate glass substrate was used in the experiments. The graphene samples were irradiated by singly charged ions of helium, nitrogen, argon or krypton at the energy of 100 keV up to fluence ranging from 1 x 10(11) cm(-2) to 1 x 10(16) cm(-2). Raman spectroscopy was used for the detection of defect size and density in graphene caused by ion irradiation. The ion induced defect size and density were determined from the Raman spectra measurements. The applicability of the SRIM code for simulation of defects generation by ions in graphene was tested. Finally, the controlled generation of the defects in graphene by using ion implantation was verified. (C) 2016 Elsevier B.V. All rights reserved.