• 文献标题:   First principles study of electronic transport through a Cu(111) graphene junction
  • 文献类型:   Article
  • 作  者:   MAASSEN J, JI W, GUO H
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   McGill Univ
  • 被引频次:   32
  • DOI:   10.1063/1.3496490
  • 出版年:   2010

▎ 摘  要

We report first principles investigations of the nonequilibrium transport properties of a Cu(111)vertical bar graphene interface. The Cu(111) electrode is found to induce a transmission minimum (TM) located -0.68 eV below the Fermi level, a feature originating from the Cu-induced charge transfer resulting in n-type doped graphene with the Dirac point coinciding with the TM. An applied bias voltage shifts the n-graphene TM relative to the pure graphene TM and leads to a distinctive peak in the differential conductance indicating the doping level, a characteristic not observed in pure graphene. (C) 2010 American Institute of Physics. [doi:10.1063/1.3496490]