▎ 摘　　要

We theoretically show that buckled two-dimensional graphene like materials (silicene and germanene) subjected to a femtosecond strong optical pulse can be controlled by the optical field component normal to their plane. In such strong fields, these materials are predicted to exhibit nonreciprocal reflection, optical rectification, and generation of electric currents both parallel and normal to the in-plane field direction. Reversibility of the conduction band population is also field- and carrier-envelope phase controllable. There is a net charge transfer along the material plane that is also dependent on the normal field component. Thus a graphenelike buckled material behaves analogously to a field-effect transistor controlled and driven by the electric field of light with subcycle (femtosecond) speed.