• 文献标题:   Formation of Carbon Clusters in the Initial Stage of Chemical Vapor Deposition Graphene Growth on Ni(111) Surface
  • 文献类型:   Article
  • 作  者:   GAO JF, YUAN QH, HU H, ZHAO JJ, DING F
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICAL CHEMISTRY C
  • ISSN:   1932-7447
  • 通讯作者地址:   Dalian Univ Technol
  • 被引频次:   78
  • DOI:   10.1021/jp2051454
  • 出版年:   2011

▎ 摘  要

To understand the nucleation of carbon atoms to form graphene on transition metal substrates during chemical vapor deposition (CVD) synthesis, carbon clusters supported on Ni(111) surfaces, namely C(N)@Ni(111) (where N 12. A ground state structural transition from a one-dimensional C chain to a two-dimensional sp(2) network (or graphene island) occurs at N = 12. It is surprising that incorporating one to three 5-membered-rings (5MRs) or pentagons into a graphene island is required to achieve the energetically most stable structure. This deep insight into the supported C cluster formation is crucial for understanding the growth mechanism of graphene on a transition metal surfaces in CVD experiments and the experimental design of CVD graphene growth.