▎ 摘　　要

Graphene as a new material is in the spotlight due to its extraordinary properties and wide range of potential applications. Chemical vapour deposition, as a method for graphene synthesis from gaseous hydrocarbon sources has great promises for large-scale graphene synthesis. However, for such grow high temperatures of 800-1000 degrees C are typically required. Here we demonstrate synthesis of single-layer and bi-layer graphene thin films of approximately 10,m in size by rapid thermal annealing process at low annealing temperature such as 600 degrees C. Synthesis was performed on copper foil from graphene quantum dots and fullerenol as solid carbon sources at different concentrations. Raman spectroscopy study has shown that the number of grown graphene layers depends on the carbon source concentration. The quality of formed graphene layers withal depends on the carbon source and its concentration, whereby graphene from graphene quantum dots had better quality. (C) 2016 Elsevier Ltd. All rights reserved.