• 文献标题:   Graphene-carbon nitride interface-geometry effects on thermal rectification: a molecular dynamics simulation
  • 文献类型:   Article
  • 作  者:   FARZADIAN O, SPITAS C, KOSTAS KV
  • 作者关键词:   thermal rectification, graphenec3n interface, molecular dynamic
  • 出版物名称:   NANOTECHNOLOGY
  • ISSN:   0957-4484 EI 1361-6528
  • 通讯作者地址:  
  • 被引频次:   14
  • DOI:   10.1088/1361-6528/abe786
  • 出版年:   2021

▎ 摘  要

In this paper we expand our previous study on phonon thermal rectification (TR) exhibited in a hybrid graphene-carbon nitride system (G-C3N) to investigate the system's behavior under a wider range of temperature differences, between the two employed baths, and the effects of media-interface geometry on the rectification factor. Our simulation results reveal a sigmoid relation between TR and temperature difference, with a sample-size depending upper asymptote occurring at generally large temperature differences. The achieved TR values are significant and go up to around 120% for Delta T = 150 K. Furthermore, the consideration of varying media-interface geometries yields a non-negligible effect on TR and highlights areas for further investigation. Finally, calculations of Kapitza resistance at the G-C3N interface are performed for assisting us in the understanding of interface-geometry effects on TR.