• 文献标题:   Ballistic bipolar junctions in chemically gated graphene ribbons
  • 文献类型:   Article
  • 作  者:   BARINGHAUS J, STOHR A, FORTI S, STARKE U, TEGENKAMP C
  • 作者关键词:  
  • 出版物名称:   SCIENTIFIC REPORTS
  • ISSN:   2045-2322
  • 通讯作者地址:   Leibniz Univ Hannover
  • 被引频次:   13
  • DOI:   10.1038/srep09955
  • 出版年:   2015

▎ 摘  要

The realization of ballistic graphene pn-junctions is an essential task in order to study Klein tunneling phenomena. Here we show that intercalation of Ge under the buffer layer of pre-structured SiC-samples succeeds to make truly nano-scaled pn-junctions. By means of local tunneling spectroscopy the junction width is found to be as narrow as 5 nm which is a hundred times smaller compared to electrically gated structures. The ballistic transmission across the junction is directly proven by systematic transport measurements with a 4-tip STM. Various npn- and pnp-junctions are studied with respect to the barrier length. The pn-junctions are shown to act as polarizer and analyzer with the second junction becoming transparent in case of a fully ballistic barrier. This can be attributed to the almost full suppression of electron transmission through the junction away from normal incidence.