• 文献标题:   High-quality electrical transport using scalable CVD graphene
  • 文献类型:   Article
  • 作  者:   PEZZINI S, MISEIKIS V, PACE S, ROSSELLA F, WATANABE K, TANIGUCHI T, COLETTI C
  • 作者关键词:   cvd graphene, hbn encapsulation, ultrahigh mobility, quantum hall effect
  • 出版物名称:   2D MATERIALS
  • ISSN:   2053-1583
  • 通讯作者地址:   Ist Italiano Tecnol
  • 被引频次:   2
  • DOI:   10.1088/2053-1583/aba645
  • 出版年:   2020

▎ 摘  要

Producing and manipulating graphene on fab-compatible scale, while maintaining its remarkable carrier mobility, is key to finalize its technological application. We show that a large-scale approach (chemical vapor deposition on Cu followed by polymer-mediated semi-dry transfer) yields single-layer graphene crystals fully comparable, in terms of electronic transport, to micro-mechanically exfoliated flakes. Hexagonal boron nitride is used to encapsulate the graphene crystals-without taking part to their detachment from the growth catalyst-and study their intrinsic properties in field-effect devices. At room temperature, the electron-phonon coupling sets the mobility to similar to 1.3 x 10(5)cm(2)V(-1)s(-1)at similar to 10(11)cm(-2)concentration. AtT= 4.2 K, the mobility (>6 x 10(5)cm(2)V(-1)s(-1)at similar to 10(11)cm(-2)) is limited by the devices' physical edges, and charge fluctuations < 7 x 10(9)cm(-2)are detected. Under perpendicular magnetic fields, we observe early onset of Landau quantization (B similar to 50 mT) and signatures of electronic correlation, including the fractional quantum Hall effect.