▎ 摘　　要

Graphene, a new carbon material with two-dimensional structure, has attracted tremendous attention all over the world because of its exceptional properties, including high mechanical strength, outstanding flexibility, high optical transparency, high carrier mobility and excellent interface contact with organic semiconductor. These properties make graphene a promising building block of thin film transistors. With a growing number of graphene properties being known, the application of graphene into different kinds of devices has seriously been considered. Integration of graphene into thin film transistor as metal modification layer, electrodes and semiconductor channel layer has been reviewed.