• 文献标题:   Properties of two-dimensional silicon grown on graphene substrate
  • 文献类型:   Article
  • 作  者:   ZHOU R, VOON LCLY, ZHUANG Y
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-8979
  • 通讯作者地址:   Wright State Univ
  • 被引频次:   12
  • DOI:   10.1063/1.4820473
  • 出版年:   2013

▎ 摘  要

The structure and electrical properties of two-dimensional (2D) sheets of silicon on a graphene substrate are studied using first-principles calculations. Two forms of corrugated silicon sheets are proposed to be energetically favorable structures. A shift of the Fermi energy level is found in both corrugated structures. Calculations of electron density show a weak coupling between the silicon layer and graphene substrate in both structures. The two forms of 2D silicon sheets turn out to be metallic and exhibit anisotropic transport properties. (C) 2013 AIP Publishing LLC.