• 文献标题:   Resonant tunneling and negative transconductance in single barrier bilayer graphene structure
  • 文献类型:   Article
  • 作  者:   NGUYEN VH, BOURNEL A, NGUYEN VL, DOLLFUS P
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Paris 11
  • 被引频次:   20
  • DOI:   10.1063/1.3273376
  • 出版年:   2009

▎ 摘  要

Using the nonequilibrium Green's function method, the electronic transport in a gate-induced barrier bilayer graphene structure is investigated. Strong resonant effects are shown to result in high amplitude oscillation of conductance as a function of Fermi energy and barrier height. Beyond a small effect of negative differential conductance (with peak to valley ratio less than 2), strong oscillations of transconductance are achieved. The amplitude of such oscillations between positive and negative values may exceed 5 mS/mu m. This effect might be helpful for further development of graphene-based nanoelectronics. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3273376]