▎ 摘　　要

In this paper, the effect of different concentrations of Ag nanoparticles embedded in graphene oxide (GO) for resistive random-access memory (RRAM) has been investigated. The spin-coating method was used for the deposition of a GO-Ag layer on indium tin oxide-coated glass substrate. The structural studies of the samples were carried out using x-ray diffraction. The morphology of the as-deposited layer was determined using scanning electron microscopy and atomic force microscopy. It has been observed that Ag-doped memory devices require low voltage to switch from OFF to ON and vice versa. The switching voltage was reduced by half in Ag-doped devices as compared to undoped devices with a high OFF/ON current ratio of similar to 10(3). The electrical stability of Ag-doped devices was tested for 4 x 10(3) s. Also, the SET/RESET behavior was tested for up to 60 cycles at a read voltage of 0.2 V. It was observed that both electrical stability and SET/RESET behavior did not exhibit excessive degradation. The switching speed of the RRAM device was calculated using an oscilloscope and found to be similar to 200 ns for the low-resistance state (LRS) and similar to 1 mu s for the high-resistance state (HRS). The capacitance in Ag-doped GO devices was recorded and found to be similar to 400 pF in the HRS as compared to 20 pF in case of undoped GO devices. It has been concluded that the charge trapping and de-trapping mechanism in case of Ag-doped GO is responsible for the enhanced properties of fabricated RRAM devices.