• 文献标题:   Veselago lens and Klein collimator in disordered graphene
  • 文献类型:   Article
  • 作  者:   LIBISCH F, HISCH T, GLATTAUER R, CHIZHOVA LA, BURGDORFER J
  • 作者关键词:   graphene, nanoelectronic, klein tunneling, veselago len
  • 出版物名称:   JOURNAL OF PHYSICSCONDENSED MATTER
  • ISSN:   0953-8984 EI 1361-648X
  • 通讯作者地址:   Vienna Univ Technol
  • 被引频次:   9
  • DOI:   10.1088/1361-648X/aa565e
  • 出版年:   2017

▎ 摘  要

We simulate electron transport through graphene nanoribbons of realistic size containing a p-n junction patterned by electrostatic gates. For a sharp p-n interface, Klein tunneling leads to refocusing of a divergent beam forming a Veselago lens. Wider transition regions allow only electrons with near-perpendicular incidence to pass the junction, forming a Klein collimator. Using a third nearest neighbor tight binding description we explore the influence of interface roughness and bulk disorder on guiding properties. We provide bounds on disorder amplitudes and p-n junction properties to be satisfied in order to experimentally observe the focusing effect and compare our predictions to very recent realizations.