▎ 摘　　要

The graphene-based photodetector with tunable p-p(+)-p junctions was fabricated through a simple laser irradiation process. Distinct photoresponse was observed at the graphene (G)-laser irradiated graphene (LIG) junction by scanning photocurrent measurements, and its magnitude can be modulated as a result of a positive correlation between the photocurrent and doping concentration in LIG region. Detailed investigation suggests that the photo-thermoelectric effect, instead of the photovoltaic effect, dominates the photocurrent generation at the G-LIG junctions. Such a simple and low-cost technique offers an alternative way for the fabrication of graphene-based optoelectronic devices. (C) 2015 AIP Publishing LLC.