▎ 摘　　要

A Schottky contact is greatly vital for electronic devices; therefore, a quantitative analysis of the Schottky interface is important in realizing a high-performance Schottky diode. In this study, we fabricate an r-GO-based Schottky diode and elucidate the charge traps in r-GO by analyzing the current-voltage characteristics. The conduction becomes space charge limited (at high voltage) because of these traps. The trap energy and concentration were calculated as similar to 0.20 0.02 eV and 2.11 x 10(15)cm(-3), respectively. Quantitative information about charge traps will help in the fabrication of high-quality r-GO-based electronic devices. The trap density is the core challenge for the material community; therefore, controlling the traps is essential in improving the performance of r-GO-based electronic devices. We believe that the quantitative analysis of the Schottky interface could be beneficial for the improvement of the charge transport in r-GO-based electronic devices.