• 文献标题:   Theory of thermionic emission from a two-dimensional conductor and its application to a graphene-semiconductor Schottky junction
  • 文献类型:   Article
  • 作  者:   TRUSHIN M
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Natl Univ Singapore
  • 被引频次:   5
  • DOI:   10.1063/1.5027271
  • 出版年:   2018

▎ 摘  要

The standard theory of thermionic emission developed for three-dimensional semiconductors does not apply to two-dimensional materials even for making qualitative predictions because of the vanishing out-of-plane quasiparticle velocity. This study reveals the fundamental origin of the out-of-plane charge carrier motion in a two-dimensional conductor due to the finite quasiparticle lifetime and huge uncertainty of the out-of-plane momentum. The theory is applied to a Schottky junction between graphene and a bulk semiconductor to derive a thermionic constant, which, in contrast to the conventional Richardson constant, is determined by the Schottky barrier height and Fermi level in graphene. Published by AIP Publishing.