• 文献标题:   Classical linear magnetoresistance in epitaxial graphene on SiC
  • 文献类型:   Article
  • 作  者:   WANG WJ, GAO KH, LI ZQ, LIN T, LI J, YU C, FENG ZH
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Tianjin Univ
  • 被引频次:   13
  • DOI:   10.1063/1.4901175
  • 出版年:   2014

▎ 摘  要

We study the magnetotransport properties of monolayer graphene grown on SiC substrates. At low magnetic fields, a parabolic magnetoresistance (MR) is observed. With increasing magnetic field, however, this parabolic MR is changed to a linear field dependence that does not show signs of saturation for magnetic fields up to 9 T. At a fixed field, the value of the linear MR decreases with increasing temperature, with its value as large as 80% under 9 T at room temperature. Furthermore, the Hall mobility is found to be suppressed when the sample is annealed at 390K under a helium atmosphere, with this suppression causing a decrease of the observed linear MR. The decrease in the linear MR shows a linear dependence on Hall mobility, which is indicative of the application of the monolayer graphene. We attribute the observed linear MR to a classical origin owing to the close relation between the MR and Hall mobility. (C) 2014 AIP Publishing LLC.