▎ 摘　　要

Thin films of large-area graphene and graphene-based materials are highly desired for electrical applications. However, the current state-of-art synthesis methods produce large-area graphene films with multiple grain boundaries (GBs) that highly hinder their charge carrier mobilities and I-on/I-off ratios. Here, we demonstrate a femtosecond laser ablation process to produce B and N co-doped graphene oxide (GO) gels with controllable total doping percentage (between 0.8 at%-2.3 at%) and effectively reduced GBs concentration. The charge carrier mobilities and I-on/I-off ratios of the produced large-area gel (similar to 100 x 2400 mu m(2)) field effect transistors (FETs) revealed extremely-high values of up to 9000 +/- 3000 cm(2)/V and 9.7E+5, respectively, comparable to the state-of-art values of a single monolayer graphene nanoflake. The increased total doping percentage also proved to improve the chemical reactivity of the gels. This femtosecond laser ablation approach could prove effective for large-area FETs with controllable mobility, Ion/Ioff ratio, and chemical reactivity. (C) 2019 Elsevier Ltd. All rights reserved.