• 文献标题:   Charge transport in graphene doped with diatomic halogen molecules (I-2, Br-2) near Dirac point
  • 文献类型:   Article
  • 作  者:   CHU SW, BAEK SJ, KIM DC, SEO S, KIM JS, PARK YW
  • 作者关键词:   halogen doped graphene, charge transport, mobility reduction, resistance decrease
  • 出版物名称:   SYNTHETIC METALS
  • ISSN:   0379-6779
  • 通讯作者地址:   Seoul Natl Univ
  • 被引频次:   24
  • DOI:   10.1016/j.synthmet.2012.06.008
  • 出版年:   2012

▎ 摘  要

We have investigated the transport properties of monolayer graphene doped with halogen molecules, iodine and bromine. For these doping, the charge neutrality point shifts to the hole carrier regime indicating p-type doping, and the carrier mobility is reduced. As compared to doping with other dopants, however, the reduction of the mobility is much weaker for doping with halogen molecules. Also, the minimum conductivities at the charge neutrality point are enhanced with subsequent doping for the monolayer graphene, in strong contrast to the cases with other clopants. When the graphene layer was doped selectively by covering its edge with a polymer layer, such unconventional behaviors were not observed any more. These observations can be understood that intercalated halogen molecules between the graphene layer and the underlying substrate leads to screening of charged impurities embedded in SiO2 substrate. Halogen molecules can be effective dopants for the graphene monolayer which changes the carrier concentration without significant degrading of the mobility. (c) 2012 Elsevier B.V. All rights reserved.