• 文献标题:   Orientation-Dependent Performance Analysis of Benzene/Graphene-Based Single-Electron Transistors
  • 文献类型:   Article
  • 作  者:   SRIVASTAVA A, KAUR K, SHARMA R, CHAUHAN P, SHARMA US, PATHAK C
  • 作者关键词:   singleelectron transistor, graphene, benzene, orientation, ab initio, charge stability, conductance
  • 出版物名称:   JOURNAL OF ELECTRONIC MATERIALS
  • ISSN:   0361-5235 EI 1543-186X
  • 通讯作者地址:   ABV Indian Inst Informat Technol Management
  • 被引频次:   3
  • DOI:   10.1007/s11664-014-3272-5
  • 出版年:   2014

▎ 摘  要

The present paper discusses charge stability and conductance analyses of benzene- and zigzag graphene fragment-based single-electron transistors (SETs) operating in the Coulomb blockade regime. Graphene and benzene are modeled using density functional theory-based ab initio analyses, treating the interaction between graphene/benzene and the SET environment self-consistently. The devices consist of an oriented graphene/benzene island coupled with source and drain electrodes. The charging energy as a function of the external gate potential has been analyzed to verify the dependence of the charge stability and conductance of the oriented SETs on the source/drain bias and gate potential. Comparative analysis of these models shows that the SET with vertically oriented graphene is more stable and has better conductance in comparison with the benzene-based SET.